|Title of the article||
GAMMA RADIATION INFLUENCE ON PROPERTIES OF P-N-TRANSITIONS BASED ON GAAS
Bulyarsky Sergey Viktorovich, Doctor of physico-mathematical sciences, professor, head of sub-department of engineering physics, Ulyanovsk State University, Honored Science Worker of the Russian Federation, corresponding member of the Tatarstan Science Academy, firstname.lastname@example.org
Irradiation of samples on the basis of GaAs scale in quanta with energy 1,25 MeV, were considered. It has been revealed reduction of quantity of defects in samples with an irradiation dose 0,3 Mrad. The resulted speed recombination (RSR) model was applied for the analysis of experimental data (the RSR is the physical size which returns by life time charge carriers).
defects, scale in quanta, speed recombination, life time, charge carriers.
Дата обновления: 11.07.2014 11:43