Article 1339

Title of the article

GAMMA RADIATION INFLUENCE ON PROPERTIES OF P-N-TRANSITIONS BASED ON GAAS

Authors

Bulyarsky Sergey Viktorovich, Doctor of physico-mathematical sciences, professor, head of sub-department of engineering physics, Ulyanovsk State University, Honored Science Worker of the Russian Federation, corresponding member of the Tatarstan Science Academy, bsv@ulsu.ru
Ermakov Mikhail Sergeevich, Post graduate student, Ulyanovsk State University, bsv@ulsu.ru

Index UDK

621.315.592

Abstract

Irradiation of samples on the basis of GaAs scale in quanta with energy 1,25 MeV, were considered. It has been revealed reduction of quantity of defects in samples with an irradiation dose 0,3 Mrad. The resulted speed recombination (RSR) model was applied for the analysis of experimental data (the RSR is the physical size which returns by life time charge carriers).

Key words

defects, scale in quanta, speed recombination, life time, charge carriers.

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Дата создания: 11.07.2014 10:06
Дата обновления: 11.07.2014 11:43